Dynamic Random Access Memory (DRAM) Market Key Drivers & On-Going Trends 2022 To 2030

Dynamic Random Access Memory (DRAM) Market

A type of random-access semiconductor memory known as dynamic random-access memory (dynamic RAM or DRAM) stores each bit of information in a memory cell that typically consists of a small capacitor and a transistor, both of which are normally based on metal-oxide-semiconductor (MOS) technology. While a capacitor and transistor are used in the majority of DRAM memory cell designs, others merely employ two transistors. When a capacitor is employed in a design, it can either be charged or discharged. These two states are considered to represent the two possible values of a bit, which are typically denoted by the numbers 0 and 1. Without intervention, the data on the capacitors would soon be destroyed as the electric charge on them progressively drains away.

It enables the PC processor to access any area of memory immediately, as opposed to needing to move sequentially from one location. It aids in the storage of enormous amounts of data in transistor- and capacitor-equipped memory cells.

DRAM Market Growth:

The expansion of personal computing devices is anticipated to fuel growth in the global market for dynamic random access memory during the course of the projected period. In the upcoming years, market expansion is anticipated to be driven by the rising demand for high-memory smartphones and tablets, the requirement for quick online operability, and the accessibility of internet connectivity. Furthermore, it is anticipated that increased demand for dynamic random access memory (DRAM), particularly in data centre infrastructures, would result from growing interest in cloud computing and the requirement for high-speed communication. Dynamic RAM is a low-power, high-density memory technology that can manage the cooling, high-speed data transfer, and backup requirements of cloud services.

Applications for dynamic RAM can be found in the computing, infrastructure, infocom, and entertainment industries. Mobile phones, personal computers, workstations, portable game consoles, PDAs, and tablets are just a few examples of the computing devices that utilise them. These gadgets use dynamic RAM to increase operational speed. Due to their increasing consumer usage and declining pricing, mobile phones are anticipated to represent an alluring share of the DRAM industry. Servers, networking hardware, and storage devices are examples of infrastructure equipment that use dynamic RAM. DRAMs are widely utilised in a variety of entertainment-related products, including camcorders, game consoles, DVD players, set-top boxes (STBs), projectors, and e-books.

The DRAM industry is expected to develop in the next years due to the rising use of memory storage chips in a variety of electronic products. Another important reason that is anticipated to grow the market is the increased use of memory ICs and microcontrollers in automotive electronics.

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Global Dynamic Random Access Memory (DRAM) Market- Segmental Analysis

By Architecture:

  • DDR3
  • DDR4
  • DDRS
  • DDR2

By Application:

  • Smartphones/Tablets
  • PC/Laptop
  • Datacentre
  • Graphics
  • Consumer Products
  • Automotive
  • Others

Regional Outlook:

The major regions constituting the geographical ambit of this business sphere are North America, Middle East & Africa, Europe, Asia Pacific, and Latin America. Among these, Asia Pacific is projected to showcase lucrative expansion trends over 2022-2030. This is attributable to the rapidly evolving consumer electronics industry, developments in the semiconductor market in China, presence of noteworthy players, surging per capita income, and growing smart device proliferation.

Key Market Players:

The prominent companies operating in this business vertical are Micron Technology Inc., Samsung Electronics Co. Ltd., Nanya Technology Corp., Kingston Technology, Intel, Elpida Memory Inc., Etron Technology Inc., Advanced Micro Device (AMD), and Texas Instruments (TI).

Notably, in October 2019, Intelligent Memory amplified its DRAM line with a new series of LPDDR4 (X) devices equipped with integrated ECC (error correction code) capabilities. The LPDDR4 and LPDDR4X memories thus, run at very high speeds with low operating voltages and power consumption.

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